sot-23 plastic-encapsulate transistors S9014 transistor (npn) features z complementary to s9015 marking: j6 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 45 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.1 a p c collector power dissipation 0.2 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c = 0.1ma, i b =0 45 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =50 v , i e =0 0.1 a collector cut-off current i ceo v ce =35v , i b =0 0.1 a emitter cut-off current i ebo v eb = 3v , i c =0 0.1 a dc current gain h fe v ce =5v, i c = 1ma 200 1000 collector-emitter saturation voltage v ce (sat) i c =100 ma, i b = 5ma 0.3 v base-emitter saturation voltage v be (sat) i c =100 ma, i b = 5ma 1 v transition frequency f t v ce =5v, i c = 10ma f= 30mhz 150 mhz classification of h fe rank l h range 200-450 450-1000 so t -23 1. base 2. emitter 3. collector b,dec , 2011 dongguan nanjing electronics ltd.,
0.1 1 10 0.1 1 10 100 0 25 50 75 100 125 150 0 50 100 150 200 250 0.0 0.3 0.6 0.9 1.2 0.1 1 10 100 02468 0 2 4 6 8 0.1 1 10 100 0.1 1 0.1 1 10 100 10 100 1000 0.1 1 10 100 0.01 0.1 1 0.1 1 10 100 1 10 100 1000 f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? c ob c ib capacitance c (pf) reverse voltage v r (v) p c ?? t a collector power dissipation p c (mw) ambient temperature t a ( ) common emitter v ce = 5v v be i c ?? t a =100 t a =25 collector current i c (ma) base-emmiter voltage v be (v) 20ua common emitter t a =25 18ua 16ua 14ua 12ua 10ua 8ua 6ua 4ua i b =2ua static characteristic collector current i c (ma) collector-emitter voltage v ce (v) 20 f t ?? h fe ?? =20 i c v besat ?? t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (ma) 2 common emitter v ce = 5v S9014 typical characterisitics i c i c t a =25 t a =100 dc current gain h fe collector current i c (ma) =20 t a =100 t a =25 i c v cesat ?? collector-emitter saturation voltage v cesat (v) collector current i c (ma) common emitter v ce =5v t a =25 transition frequency f t (mhz) collector current i c (ma) b,dec ,2011
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